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This process is automatic. 0 In this work, we report on properties of IGZO TFTs fabricated using laser spike annealing (LSA) with a scanned continuous wave CO{sub 2} laser. Thermal annealing is a standard method for bringing block copolymer films into their thermal equilibrium morphology. There are two main approaches to annealing; one is the traditional lamp-based approach, and the other is LSA, a more advanced option. Global capital spending on semiconductor equipment is projected to grow 21.1 percent in 2014 and 21.0 percent in 2015. 2018Apr 11 - Jun 4 The LSA101 dual-beam tools were chosen over competing systems due to greater flexibility and capability for annealing with low overall thermal budgets. The waveforms of each of these reflections are out of phase and will have different wavelengths. 0 0000003863 00000 n We developed an LSA tool that uses infrared light to create a short laser spike with a long wavelength: 10.6m at 600 watts of power to raise the temperature of the silicon for 150-200 microseconds precisely where the laser couples with the silicon. (KrF) laser beam with a pulse duration of 38 ns. Ultratech plans to ship the LSA101 tools to the customers' foundries to China in Q1 2017. 40 505 10 15 Time of Unroofing Paleodepth of 120C paleoisotherm Exhumed partial annealing zone Exhumed partial annealing zone-- distinctly shorter mean track lengths Long tracks only--all pre-2 Ma . Join now to see all activity Experience Litho Equipment Engineer Thermo Fisher Scientific . The company's first commercial product based on the new LTP technology platform will be for laser spike annealing (LSA), which will enable ultra-shallow junction formations for multiple generations. 0000003342 00000 n Within this profile the polymer film reaches different peak temperatures, and the sweeping speed determines the dwell time at a specific temperature. The thickness of the internal oxide layer is determined by the highest temperature reached by . Conventional NiSi processing involves two RTA steps. The thermal . \Ik.8p2h0,`j R3\s1aqfL\ *t60O!_|AA@0205e 3 a Dopant activation of Si-doped InGaAs and GaN heterostructure was studied using CO2 and laser diode annealing in sub-millisecond and millisecond timescale. Veeco's leading laser spike annealing (LSA) technology is a key differentiator for leading semiconductor manufacturers due to its low thermal budget, Liked by Kui Lin. Full ambient control capability has been developed for LSA to accommodate this need. strings of text saved by a browser on the user's device. The full width at half maximum of the laser trace is about mm wide, and can thus be resolved spatially with the x-ray microbeam of 15 m (Figure 1b). - Short wavelength laser is optimum - mostly absorbs energy in the top few nm. Thermal annealing is a standard method for bringing block copolymer films into their thermal equilibrium morphology. In this regime, significant advantages have been shown in applications of ultra-shallow junction formation in ion-implanted IIIV and IIIN semiconductor materials. [2] Ruipeng Li, Sterling Cornaby, Marleen Kamperman, and Detlef-M. Smilgies: "Nanocomposite Characterization on Multiple Length Scales Using SAXS", J. Synchrotron Rad. FIGURE 4 shows the schematics of our patented micro-chamber approach that allows ambient control to be implemented in a scanning system using non-contact gas bearing. The disclosure is directed to laser spike annealing using fiber lasers. Yun Wang, Ultratech's chief technologist for laser processing, explained: "As we continue to scale to smaller nodes, contact resistance is widely . Typical temperature programs for spike and ash annealing are shown in Figs. Figure . 0000000016 00000 n The dual beam system offers flexibility in tuning the temperature and stress profiles. However, typical thermal annealing is slow, and polymers may degrade at high annealing temperature. Veeco is the industry leader driving HDD manufacturing to new levels of productivity. For short-wavelength 1.E-05 MSA tools such as Flash Anneal (FA) or diode laser annealing (a) (a) (DL) the WID temperature range can be anywhere from 100- 1.E-06 250oC, and is highly dependent on device layout. 0000002032 00000 n Laser texturing can enhance optical density through excellent light trapping as shown in Figure 1 [3]. The study shows that both disordering (Figure 3a) and ordering (Figure 3b) can be kinetically suppressed at sub-millisecond timescales. Hence a single laser spike annealed trace provides a cross section of the thermal history of the annealing process. FIGURE 5. . - Heat transfer dynamics to underlying layers. Similar to the laser spike annealing system, the LM7 is also based on two laser sources, but provides annealing on a much shorter, nanosecond scale - meaning far less heat is transferred. Medical computer scientists calculated the . In the future, thermoreflectance imaging can be exploited to understand not only impurity interaction in IIIV and IIIN materials, but also to explore kinetics and phase transformations in metastable materials. Nowadays, it is considered one of the best marking solutions for engraving metals, as it provides high-contrast, high-quality identifiers in all types of production lines. DOE Offi 1w ZAWe 1K=5aYeZT-mc!J [3-fBE0hg'`V6_1*Jf.^Sc&_e"%{NW0- Laser thermal treatment of organosilicate coatings in a process characterized by extremely short dwell times and extremely high temperatures, generally referred to as laser spike anneal (LSA) appears to be a viable approach to post-porosity enhancement of mechanical properties. As the metal is heated, oxygen is diffused below the surface. Installed at leading IDMs and Foundries globally, Veecos LSA101 System is the preferred technology for high-volume manufacturing of advanced logic devices from the 40nm to 14nm nodes. The gaseous ambient for both spike and ash . "That process involved exposing a mask to a very uniform illumination and then projecting the mask upon the wafer.". It is through passivation that stainless steel is protected from rust. Hence a single laser spike annealed trace provides a cross section of the thermal history of the annealing process. 18, 697701 (2011). SIMS profiles of Ga-doped (left) p+/n and As-doped (right) n+/p Ge junctions annealed by LSA. 0000003662 00000 n The service requires full cookie support in order to view this website. The following science pages will show how X-rays have become a mainstream tool for examining the structure and function of our material world, with an eye towards designing new materials, solving technological problems, and even curing diseases. With MSA, junctions with enhanced activation and reduced diffusion can be obtained. 0000001700 00000 n echo date('Y'); ?> Gold Flag Media LLC. 3 !1AQa"q2B#$Rb34rC%Scs5&DTdEt6UeuF'Vfv7GWgw 5 !1AQaq"2B#R3$brCScs4%&5DTdEU6teuFVfv'7GWgw ? The excitation laser beam (640 nm, continuous-wave, OBIS, Coherent) was expanded with . One equipment company that already sells a laser spike annealing system, though for a different processing step, is California-based Ultratech. It has long been the process of record for most of the industrys foundries and IDMs for high-performance logic devices due to its unique hardware configuration and real-time process control capability. Tpk = 1200C, dwell time = 10ms, preheat T = 800C for flash. 0000001499 00000 n Sub-20nm system-on-chip and FinFET devices have specific manufacturing challenges that can be resolved with laser spike annealing (LSA) technology. 0000001737 00000 n The European semiconductor equipment market is expected to grow along with the world market. According to the August edition of the SEMI World Fab Forecast, semiconductor equipment spending will increase from $29 billion in 2013 to $42 billion in 2015. 0000004641 00000 n The metal begins to oxidize internally. - Do not disrupt already-fabricated devices lying beneath the fresh Si layer Issues. Once cooled off, you are able to observe a change in the color of the metal. Detlef Smilgies, CHESS and Alan Jacobs, Cornell University. Comparison of simulated temperature profiles between long dwell laser and flash annealing. evolve into the spike structures that characterize black silicon (Fig. For laser spike annealing temperatures above 1000 C , mobility is found to degrade due to partial relaxation and dislocation formation in the Si _0.3 Ge _0.7 channel. pulsed laser deposition [91,92], . Figure 1a schematically shows the laser spike annealing procedure, where a focused laser beam from a 120 W infrared CO2 laser (=10.6 m) is swept across the sample. The colored look of the metal that has been processed through laser annealing can be explained by the thin-film interference phenomenon. Parasitic resistance components for different nodes of FinFET, calculated using an analytical model. The firm's LSA100 and flagship LSA101 tools can be used to make ultra-shallow junctions and highly activated source/drain contacts in both logic chips and LEDs, states the company on its web site. Specifically, the initial starting state is retained to extreme temperatures as polymer motion is suppressed. Prediction of Rheumatoid Joint Inflammation Based on Laser Imaging Anton Schwaighofer, Volker Tresp, Peter Mayer, . Hence heat dissipation occurs only in one dimension (1D vertical direction). We continuously strive to improve our systems to meet continuously evolving requirements. :R*6+F]o8LQP(Z>&iQ(.`l"99`*\=!Xs/1j% "+r=J(LPIE$dJ-22k'r&.a0F_-,} 4` > endobj 444 0 obj <> endobj 445 0 obj <>/ColorSpace<>/Font<>/ProcSet[/PDF/Text/ImageB/ImageC]/ExtGState<>>> endobj 446 0 obj [/ICCBased 460 0 R] endobj 447 0 obj <> endobj 448 0 obj <>stream Figure 1a schematically shows the laser spike annealing procedure, where a focused laser beam from a 120 W infrared CO2 laser (=10.6 m) is swept across the sample. Spike annealing was performed in a Mattson RTP sys-tem with a maximum temperature of 1000 C-1050 C. *wu`:ILI$I%)$IJI$RI$S4\zA|SI%)$IJI$R8L AL +@S]6Xa.>BSIvb_GV}wk^~3w_C(w\Q_ %)Z]u|66}lye|M:D5A}4W{f.R`tk+#3"\6 ti_R*OM$YYT j2Bcpi5]:XMcu0. The two waves interfere either constructively or destructively, giving a particular color to the metal. 2018Proposal/BTR deadline: 2/1/18. "The other thing that is critical to device fabrication is that the junctions have to be more abrupt," Talwar said. All Rights Reserved. endstream endobj 258 0 obj <> endobj 259 0 obj <> endobj 260 0 obj <>/ColorSpace<>/Font<>/ProcSet[/PDF/Text/ImageB/ImageC]/ExtGState<>>> endobj 261 0 obj [/ICCBased 273 0 R] endobj 262 0 obj <> endobj 263 0 obj <>stream endstream endobj 264 0 obj <> endobj 265 0 obj <> endobj 266 0 obj <> endobj 267 0 obj <> endobj 268 0 obj <> endobj 269 0 obj <> endobj 270 0 obj <>stream RTP uses lamp sources to heat the silicon very quicklyon the order of secondsto temperatures of about 1000C, Talwar said. A second reflection occurs when the light transmitted through the oxidized layer hits the unmodified substrate. The oxide layer also absorbs a fraction of the light that passes through it. $$''$$53335;;;;;;;;;; %% ## ((%%((22022;;;;;;;;;; h" ? The temperature dependence of reflectance at short wavelengths was used to determine the in-situ dynamic temperatures during CO2 LSA. Light shone on a metal surface that has been annealed is split into two waves. By replacing the 2nd RTA with a high temperature MSA (700~900C), it can reduce leakage as well as improve performance. Focus on Laser Spike Annealing & AP Lithography tools. You will be redirected once the validation is complete. t.)\5K9>0* MRt}RNf2:Ln `$^/;m&D !~ZhJ-Z.i%`\&W)p]Lh!' No other LSA tool on the market can do this. CHESS is operated and managed for the National Science Foundation by Cornell University. 0000018343 00000 n xb```f``z B@1vq"F826_Z~'ERyl~tA}C^wm*E7#,Q"1)QyU466$,rx`|"W+fV!,auG'3xvG [@K;&)GE& But as for a simple scratch, a new passivated layer will be created spontaneously, thereby preserving the stainless steel from further deterioration. lAzMuC-NE/s0u)]s # The junction depth, abruptness and resistance Stainless steel is commonly used in the medical, automotive, food, energy and heavy industries, thanks to its resistance to corrosion and low chemical reactivity. 2023 Endeavor Business Media, LLC. www.laserfocusworld.com is using a security service for protection against online attacks. Between these two technologies, the choice is not always easy. By YUN WANG, Ph.D., Ultratech, San Jose, CA. Annealing is used to induce softness, relieve internal stress, and to refine the structure. xref Laser annealing is very different from other laser marking mechanisms readLaser Etching, Engraving & Annealing: What'sthe Difference? ,. As the layer gets thicker, more light is absorbed (and less is reflected). Y. Wang, S. Chen, M. Shen, et al. Veeco's new, SEMI-compliant facility serves as the company's center of excellence for the development and production of laser annealing . 0000001815 00000 n Laser-spike annealing (LSA), developed by Cornell researchers backed by Semiconductor Research Corp. (Research Triangle, N.C.) , has already been tested for both 193-nanometer immersion lithography and 13-nm extreme ultra violet (EUV). tion. Standard LSA used in front-end applications has Tpk ranging from 1050~1350C and tdwell from 0.2~2ms. With dimensions approaching atomic scales, the need for low thermal budget processes offered by millisecond annealing (MSA) becomes more important to precisely control the impurity profiles and engineer interfaces. 0000004651 00000 n As the metal is heated, oxygen is diffused below the surface. 0000003433 00000 n The key to choosing the best technology is to understand your marking requirements. A promising path to lower Rc is interface engineering by dopant segregation using pre or post silicide implantation. The heat dissipation is between two-dimensional (2D) and three-dimensional (3D) (2D for an infinitely long line beam, and 3D for a point source). Laser Etching, Engraving & Annealing: What'sthe Difference. The unique nature of the LSA platform enables our . 0000001364 00000 n Outline . Laser processing applications that leverage laser scan heads are especially susceptible to errors from thermal loads. During laser annealing, thermodynamic limits were also approached including materials decomposition and damage, which ultimately limited full characterization of the activation behaviors. 380v corn puff making machine. LSA extended process space. Previously thought impractical for semiconductor-scale manufacturing applications, laser annealing is likely to take on a key role as the semiconductor industry proceeds toward sub-100-nm feature sizes, according to Somit Talwar, who described the technology in July at the Semicon West exhibition in San Francisco, CA (see figure). In this work, we will compare junction performance and integratablity of fast-ramp spike, flash, SPER and laser annealing down to 45nm CMOS. Over the last decade, new process technologies and materials have emerged, such as strained silicon, high-k/metal gate (HKMG) and advanced silicide. "We then match the size of that beam to the size of the dye, and so we are exposing a single dye in a single shot. Veeco's patented LSA101 and LSA201 Laser Spike Annealing (LSA) Systems deliver the highest temperatures in the microsecond time scale. A first reflection occurs when ambient light rays hit the superficial oxide layer. Laser annealing can only be used on titanium, steel and stainless steel. A devices thermal budget is a time/temperature calculation. Laser annealing does not remove anything from a metal surface. 274 0 obj <>stream Meanwhile, the junction depth can be controlled by the low-temperature annealing process prior to the laser . How to assure the process repeatability, uniformity and precise control focused laser beam to avoid overlaps . Below the 10nm technology node, new materials with enhanced transportation, such as SiGe/Ge and III-V compounds, may be needed to meet the performance requirements. LSA extended process space. PLAINVIEW, N.Y., Nov. 22, 2021 (GLOBE NEWSWIRE) - Veeco Instruments Inc. (NASDAQ: VECO) today announced they have shipped the first LSA101 Laser Spike Annealing System from their new San Jose, California facility to a leading semiconductor manufacturer. . A key aspect of achieving beam uniformity resides in the technology that enables the illumination source to compensate for the variations in surface absorption across different circuit features on a wafer. 0000001599 00000 n Even if some of the chromium oxides is scratched off, a new layer of chromium oxide will form, maintaining the metals corrosion resistance and chemical passivity. The Infona portal uses cookies, i.e. 2023 Cornell High Energy Synchrotron Source, Run, run, as fast as you can laser spike annealing of block copolymer films, In-Person User Orientation and Safety Training, Calculator for absolute flux measurement using XPD100, Characteristic emission lines of the elements. Adobe d See the image below. We use a CO 2 laser with a 60 W continuous wave (CW) maximum output, operating at a wavelength of 10.6 m . A second beam can be added to form a dual beam system that allows more flexibility to adjust the temperature profiles, and expands the process capability to low T and long dwell time. Different process gas can be introduced to accommodate various annealing and material engineering needs. LSA provides the solution. The invention discloses a method for preparing ohmic contact of p-type gallium arsenide. Alan Jacobs from Mike Thompsons group and Clemens Liedel from Chris Obers group, both at the Department of Materials Science and Engineering, brought samples to CHESS D1 station for a detailed analysis of laser annealed traces. Alternatively, LSA uses a single narrow laser beam to heat the wafer surface from substrate temperature to the peak annealing temperature. The time-resolved PL (TRPL) decay transients were measured using a picosecond pulse diode laser (EPL-470). "So the work we have done is in developing processes to integrate the laser-annealing technology into a complementary metal-oxide semiconductor process," Talwar said. Lamp based is a simple, slow process that uses white light to apply heat in on/off stages to bare silicon. 0000002069 00000 n A key advantage of LSA is its broad scalability and adaptability for different applications. The spike anneal using Ar arc lamp has been demonstrated. Temperature profiles were carefully calibrated in the lab for different laser power levels and dwell times. By using our websites, you agree to placement of these cookies and to our. Privacy and Other Terms | Legal Notices, https://www.eetimes.com/laser-spike-annealing-could-boost-litho/. We are ready to help you make a material difference in LSA processes. These devices must be the most advanced, most reliable chips available to meet the requirements of todays computing needs. LSA Flash Anneal / Diode Laser Laser Spike Anneal (LSA) technology combines a continuous-wave (CW) laser with projection optics and active beam feedback controls (uniformity, temperature, dwell time) to enable the ultra shallow junction formation. Because we understand the importance of improving within-die and die-to-die uniformity in high volume manufacturing, weve focused tool capabilities that monitor and control peak anneal temperature to reduce pattern dependency. Short dwell time is beneficial for reducing wafer warpage and litho misalignment, especially for devices with high strain. This article will explain how LSA technology plays an enabling role to overcoming manufacturing challenges for sub-20nm logic devices. High temperature promotes phase mixing of Si-rich Ni silicide at the silicide/Si interface and lowers Schottky barrier height (SBH). GaN Compounds; III-V Semiconductors; Raman Spectroscopy; Thermoreflectance; Chemical engineering; Thermal Imaging; Materials Science; Laser Annealing. Laser Spike Annealing for FinFETs Jeff Hebb, Ph.D. Julyy, 11, 2013 1 NVVAVS West Coast JunctionTechnology Group Meeting July 11, 2013. Three main stages of the ion explosion spike according to Fleischer et al. Please enable JavaScript on your browser and try again. Spike Timing-Dependent Plasticity in the Address Domain R. Vogelstein, Francesco Tenore, . CHESS has proposed that the NSFsupport a sub-facility at CHESS. n+c(]x>"hv3&m bW+1+xrA$udaooeD NUB,b@K7v |`4$;De3;Z t1O+uX|1FzBanN4{fU1 K8 The method includes performing laser spike annealing of a surface of a wafer by: generating with a plurality of fiber laser systems respective CW output radiation beams that partially overlap at the wafer surface to form an elongate annealing image having a long axis and a length L A along the long axis; heating at least a . When: 1:00 p.m. 2:00 p.m. EST, 26 April 2022. FIGURE 2. Annealing and the Rate Distortion Problem Albert Parker, Tom\v Gedeon, . Laser Spike Annealing (LSA) is a powerful technique for investigating reaction kinetics at high temperatures in the sub-millisecond time regime. Jacobs developed software for automatic analysis of these traces; this involved background fitting and integrating the intensity of the first order peaks (see Figure 2). Because laser-spike annealing (LSA) activates S/D dopants within local and selective areas in a short time, LSA has been extensively used to moderate thermal issues. Goals. Ultratech, Inc. Laser spike annealing and its application to leading-edge logic devices, Proceedings of 16th IEEE International Conference on Advanced Thermal Processing of Semiconductors, 2. LSA technology uses a long wavelength p-polarized CO2 laser with Brewster angle incidence. In fact, the marking does not change the surface roughness of the metal surface. There is, however, a limitation in the maximum activation level it can achieve. The technique is currently being considered for adoption by SRC members, including IBM Corp., Texas . Once cooled off, you are able to observe a change in the color of the metal. With MSA, because of the short duration, agglomeration does not occur until ~900C. 0000002958 00000 n 0000000696 00000 n The improvement in leakage distribution results from the statistical reduction of Ni pipe defects due to the low thermal budget of MSA. CHESS users come from around the world and represent both academic and corporate communities. "We take the pseudo-Gaussian beam that comes out of the laser and we shape it into a rectangle with extremely good uniformity throughout," Talwar said. By YUN WANG, Ph.D., Ultratech, San Jose, CA. Lower leakage and better surface morphology are also observed in hafnium-based, high-k films when annealed by a laser. The LSA101 system enables critical millisecond annealing applications that allow customers to maintain precise, targeted high processing temperatures, and thus achieve gains in device performance, lower leakage, and higher yield. Nanosecond transient absorption (TA) spectroscopy was . Passivation that occurs after the annealing process tends to deteriorate the marking on the steel. All 380v corn puff making machine wholesalers & 380v corn puff making machine manufacturers come from members. 1 and 2, respectively. annealing (Fig. Laser annealing is particularly interesting for the identification of medical equipment as it doesnt create any nooks or crannies that might enhance bioburden. How does Peak to Valley (PV) and Root Mean Square (RMS) affects the quality of your optic? Incorporating nitrogen into a high-k dielectric film can improve thermal stability, reliability, and EOT scaling. Close. The wafer backside is typically heated by a hot chuck or lamps to reduce the front surface peak temperature jump, and in some cases, to reduce the flash lamp power requirement or facilitate laser light absorption. It can also be used to improve activation and fine tune the junction depth. The study shows that both disordering (Figure 3a) and ordering (Figure 3b) can be kinetically suppressed at sub-millisecond timescales. c\Bo\@. Activation levels measured by SSRM, however, are lower for both samples, and the peak carrier concentration value increases only slightly upon spike annealing, going from ~2E20/cm 3 in sample D02 to ~2.2E20/cm 3 in sample D03. Post nitridation anneal with MSA provides opportunities to stabilize the film with a more precisely controlled nitrogen profile, which is important since excessive nitrogen diffusion can increase interface trap and leakage. Our latest development is an LSA flash anneal process that achieves the highest temperature in the shortest amount of time. 5). Figure 1a schematically shows the laser spike annealing procedure, where a focused laser beam from a 120 W infrared CO2 laser (=10.6 m) is swept across the sample. The disclosure is directed to laser spike annealing using fiber lasers. Within this profile the . 0000019775 00000 n To manage ever-tightening thermal budgets critical to device performance, we developed diffusionless super activation. 2018Proposal/BTR deadline: 12/1/17 This produces more uniform temperature and stress distributions in product wafers than lamp-based short-time annealing processes. The user team acquired close to 100,000 images on a fast Pilatus 200k detector corresponding to 3 sample materials with ~40 laser traces each. Laser Spike Annealing for sub-20nm Logic Devices Jeff Hebb, Ph.D. Julyy, 10, 2014 1 NCCAVS Junction Technology Group Semicon West Meeting July 10, 2014. Annealing is a thermal process used in the far front end of semiconductor device manufacturing to lower silicon resistance and activate dopants injected into crystalline layers for stress relaxation. Goal is to outrun damage to the polymer by employing ultrafast heating and cooling rates. High quality p+n ultrashallow junctions were fabricated by high dose plasma doping and two step annealing involving low-temperature furnace annealing and excimer laser annealing. "To date, we have demonstrated transistors down to 30 nm using the technology, and at this point we are ready to demonstrate circuits as well," he said. 0000004887 00000 n 0000004157 00000 n Since the thermal stress is localized, the backside can be chucked to facilitate heat sinking. And in most cases, not just any chips will do. FIGURE 6. For example, studies on SiGe/Si heterostructures have shown that MSA can enable a higher annealing temperature than RTA, without strain relaxation or structural degradation. Typically, the WID temperature range for LSA for USJ processes is on the order of 5-20oC. The cleaned FTO glasses were coated with a c-TiO 2 layer and then exposed to 450 C of annealing treatment . [2] Ruipeng Li, Sterling Cornaby, Marleen Kamperman, and Detlef-M. Smilgies: "Nanocomposite Characterization on Multiple Length Scales Using SAXS", J. Synchrotron Rad. . 0000004877 00000 n %PDF-1.4 % Our dual-beam technology was designed to eliminate the need for dopant deactivation. Approach. As new materials emerge and device dimensions approach the atomic scale, precise thermal budget control becomes critical. It is a process that produces conditions by heating, and maintaining a suitable temperature, and then cooling. Local Resistance Profiling of Ultra Shallow Junction Annealed with Combination of Spike Lamp and Laser Annealing Processes using Scanning Spreading Resistance Microscope. The Infona portal uses cookies, i.e. Close. xref LSA201 Laser Spike Anneal System . www.laserfocusworld.com is using a security service for protection against online attacks. All rights reserved. 2017Nov 1 - Dec 21 Under LSA, the activation of highdose implanted dopants was increased in both InGaAs and GaN to peak concentrations comparable (>80%) to the as-implanted dose. Outline . These properties are assured by the presence of a layer of chromium oxide that is created by a spontaneous process called passivation. Building devices at advanced process nodes to meet the needs of the digital transformation means taking a close look at processes every step of the way. Ultratech acquired technology and a research team in 1994 from Lawrence Livermore Labs focused on developing a projection laser-anneal process. Schematic of the experimental setup for R C measurements via laser spike annealing. The full width at half maximum of the laser trace is about mm wide, and can thus be resolved spatially with the x-ray microbeam of 15 m (Figure 1b). Essentially, the temperature has to be high enough to activate the dopants, but not too high to overheat the device. 257 18 The marking process can generate different colors: blues, browns and yellows. It is performed before the metal layers are added, and is instrumental in providing a structurally sound foundation for the device. Abstract: Laser spike annealing (LSA) is a disruptive technology which has been successfully demonstrated for advanced junction engineeringcreating highly activated ultra-shallow junctions with near diffusion-less boundaries. Based on laser-annealing technology developed at Stanford University (Stanford, CA) and Lawrence Livermore National Laboratory (Livermore, CA), engineers at Ultratech Stepper (San Jose, CA) have progressed to an alpha product level in a tool to fabricate significantly shallower and more abrupt transistor junctions than are currently available through rapid thermal processing (RTP).